page 1 qw -bscxx rev : comchip t echnology co., l td. features - rated to 650v at 10 amps - short recovery time - high speed switching possible - t emperature independent switching behaviour . company reserves the right to improve product design , functions and reliability without notice. - high temperature operation. - high frequency operation. c(3) a(2) c(1) parameter unit maximum ratings (at t a =25c, unless otherwise noted) repetitive peak reverse voltage dc bolcking voltage continuous forward current non-repetitive peak forward surge current power dissipation t ypical thermal resistance operating junction temperature range sym bol v rrm v dc i f i fsm p tot r jc t j 650 100 109 48 1.37 -55 ~ +175 v v a a w c/w c storage temperature range t stg -55 ~ +175 c v alue 650 t c = 25c t = 135c c t = 150c c 3 3 15 10 repetitive peak forward surge cruuent i frm 50 a conditions t c = 25c, tp = 10ms half sine wave, d = 0.3 t c = 25c, tp = 10ms half sine wave t c = 2 5 c t c = 1 10c junction to case circuit diagram reverse v oltage: 650 v forward current: 10 a rohs device CDBDSC10650-G silicon carbide power schottky diode surge peak reverse voltage v rsm 650 v - positive temperature coef ficient on v f dimensions in inches and ( millimeters ) d-p ak(t o-252) 0.012(0.30) max. 0.091(2.32) 0.089(2.28) 0.023(0.58) 0.018(0.46) 0.114(2.90) 0.100(2.55) 0.090(2.29) 0.035(0.89) 0.023(0.58) 0.016(0.43) 0.034(0.86) 0.026(0.66) 0.085(2.16) 0.093(2.37) 0.264(6.70) 0.256(6.50) 0.215(5.46) 0.201(5.10) 0.051(1.30) 0.043(1.10) 1 2 3 0 . 4 0 9 ( 1 0 . 4 0 ) 0 . 3 9 4 ( 1 0 . 0 0 ) 0 . 2 4 4 ( 6 . 2 0 ) 0 . 2 3 6 ( 6 . 0 0 )
page 2 qw -bscxx rev : comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. unit electrical characteristics (at t a =25c, unless otherwise noted) t otal capacitive charge t otal capacitance nc pf conditions q c c 730 690 parameter max. sym bol min. forward voltage v f i f = 10a, t j = 25c v 1.7 2.5 i f = 10a , t j = 175c t yp. 1.48 1.7 reverse current a i r 200 v r = 650v , t j = 25c v r = 650v , t j = 175c 100 30 20 v r = 400v , t j = 150c q c = c(v) dv vr 0 36 v r = 0v , t j = 25c, f = 1mh z v r = 200v , t j = 25c, f = 1mh z v r = 400v , t j =25c, f=1mh z 75 72 74 71 ra ting and characteristic cur ves (CDBDSC10650-G) silicon carbide power schottky diode c a p a c i t a n c e b e t w e e n t e r m i n a l s , c j ( p f ) reverse v oltage, v r (v) fig.4 - capacitance vs. reverse v oltage 100 200 600 0 400 0.01 0.1 1 10 100 1000 fig.2 - reverse characteristics 300 r e v e r s e c u r r e n t , i r ( m a ) reverse v oltage, v r (v) 0 0.032 0.072 0 200 400 800 0.04 0.056 100 300 600 500 700 0.008 0.048 0.064 0.016 case t empature, t c (c) f o r w a r d c u r r e n t , i f ( a ) fig.1 - forward characteristics f o r w a r d c u r r e n t , i f ( a ) forward v oltage, v f (v) 0 1 4 13 2.5 0 2 0.5 2 3 5 1.5 1 6 7 10 fig.3 - current derating 9 8 t j =25c 0.024 t =1 25 c j t j =2 5c t j =7 5c 500 150 175 75 125 70 30 10 0 50 100 25 20 40 50 60 70% duty 90 80 dc 11 12 t j =75c t =125c j t =175c j 0.08 0.088 t =1 75 c j 100 1 10 120 130 1 0 % d u t y 5 0 % d u ty 3 0 % d u ty 700 750 10000
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